Path:OKDatasheet > Catalog Datasheet > Cree Datasheet > W4NRD8C-U000

W4NRD8C-U000 spec: Diameter 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

W4NRD8C-U000 similares

  • W4NRD8C-U000
    • Diameter 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
  • W4NRE0X-0D00
    • Diameter 76.2mm; standard micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

W4NRD8C-U000 Datasheet e Spec

Fabricante : Cree 

Embalagem :  

Pins : 0 

Temperature : Min 0 °C | Max 0 °C

Tamanho : 306 KB

Aplicativo : Diameter 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition 

W4NRD8C-U000 PDF Download