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72UF20A 45L80 309UR120P4 IRFZ44ESTRL SD600N12MSC ST3230C18R3 IRHNA9064 SD200OC08L SD150R12MSC SD203N20S10PSC IR2113-2 IRHM9230 112RKI80 SD600N20MSC 45LR30 SD103N10S20MC IRG4PC40KD IRF5N3205 ST173S12MFK1 ST333S08MFM0L SD153N10S10PBV ST280S06P1VL IRGBC30K-S IRG4RC10KD SD30OC12C IR

IR Datasheets Catálogo-104

Nome do ítemFabricanteAplicativo
ST300C08L1L IRPhase control thyristor
IRFR024N IRPower MOSFET, 55V, 17A
72UF20A IRStandard recovery diode
45L80 IRStandard recovery diode
309UR120P4 IRStandard recovery diode
IRFZ44ESTRL IRN-channel power MOSFET for fast switching applications, 60V, 48A
SD600N12MSC IRStandard recovery diode
ST3230C18R3 IRPhase control thyristor
IRHNA9064 IRHEXFET transistor
SD200OC08L IRStandard recovery diode
SD150R12MSC IRStandard recovery diode
SD203N20S10PSC IRFast recovery diode
IR2113-2 IRHigh and low side driver
IRHM9230 IRHEXFET transistor
112RKI80 IRPhase control thyristor
SD600N20MSC IRStandard recovery diode
45LR30 IRStandard recovery diode
SD103N10S20MC IRFast recovery diode
IRG4PC40KD IRInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.1V @ VGE = 15V, IC = 25A
IRF5N3205 IRHEXFET power MOSFET surface mount. BVDSS = 55V, RDS(on) = 0.008 Ohm, ID = 55A
ST173S12MFK1 IRInverter grade thyristor
ST333S08MFM0L IRInverter grade thyristor
SD153N10S10PBV IRFast recovery diode
ST280S06P1VL IRPhase control thyristor
IRGBC30K-S IRInsulated gate bipolar transistor
IRG4RC10KD IRInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A
SD30OC12C IRStandard recovery diode
IRF640STRL IRN-channel power MOSFET for fast switching applications, 200V, 18A
302UFR120YPD IRStandard recovery diode
305UA120P2 IRStandard recovery diode

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