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BC 300HF120M IRU1117-25CP IRFB260N SD203N12S20PBC IRGBC20SD2 IRKT43018 SD203N14S20PSC IRFPS40N50L SD233N40S50PTC 305U250P5 ST300C04L3 ST300C16L3L 305U80P2 81RIA120M IRF350 IRF7501 IRFBE30 SD303C08S10C SD453R12S30PTC IRHM9160 SD203N14S20MC JANTX2N6792 IRCZ24 CPV363MM ST2600C22R0L

IR Datasheets Catálogo-112

Nome do ítemFabricanteAplicativo
IRFB23N20D IRHEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.10 Ohm, ID = 24A
SD200N20PBC IRStandard recovery diode
300HF120M IRStandard recovery diode
IRU1117-25CP IR800mA low dropout positive fixed 2.5V regulator
IRFB260N IRHEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.040 Ohm, ID = 56A
SD203N12S20PBC IRFast recovery diode
IRGBC20SD2 IRInsulated gate bipolar transistor with ultrafast soft reconery diode
IRKT43018 IRThyristor/diode and thyristor/thyristor
SD203N14S20PSC IRFast recovery diode
IRFPS40N50L IRHEXFET power MOSFET. VDSS = 500 V, RDS(on) = 0.087 Ohm, ID = 46 A
SD233N40S50PTC IRFast recovery diode
305U250P5 IRStandard recovery diode
ST300C04L3 IRPhase control thyristor
ST300C16L3L IRPhase control thyristor
305U80P2 IRStandard recovery diode
81RIA120M IRPhase control thyristor
IRF350 IRRepetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 400V, RDS(on) = 0.300 Ohm, ID = 14A
IRF7501 IRHEXFET power MOSFET. VDSS = 20V, RDS(on) = 0.135 Ohm
IRFBE30 IRHEXFET power MOSFET. VDSS = 800V, RDS(on) = 3.0 Ohm, ID = 4.1A
SD303C08S10C IRFast recovery diode
SD453R12S30PTC IRFast recovery diode
IRHM9160 IRHEXFET transistor
SD203N14S20MC IRFast recovery diode
JANTX2N6792 IRHEXFET power mosfet
IRCZ24 IRHEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.040 Ohm, ID = 26A.
CPV363MM IRIGBT SIP module
ST2600C22R0L IRPhase control thyristor
ST173S12PFK1 IRInverter grade thyristor
301UR120P3 IRStandard recovery diode
ST180S08M1L IRPhase control thyristor

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