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02UR100A IRFZ44ZS ST180S20P0L 181RKI40 200HFR80PSV 70UR60 SD600N20PSC ST230S12M1VL 303U200P3 IRG4BC40W SD253R08S15PSV IRKT50008 ST110S16P0L ST303C08LHK0 305UR80P4 ST303C08CHK3L SD103N04S10PBC IRF5305S ST230S08P1L 70UFR120YPD SD203N16S15MV IRF3415S ST303S10PFN3 ST330C16L2 IR51HD31

IR Datasheets Catálogo-150

Nome do ítemFabricanteAplicativo
IRLI630G IRHEXFET power mosfet
IRG4RC10U IRInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.15V @ VGE = 15V, IC = 5.0A
302UR100A IRStandard recovery diode
IRFZ44ZS IRN-channel power MOSFET for fast switching applications, 55V, 51A
ST180S20P0L IRPhase control thyristor
181RKI40 IRPhase control thyristor
200HFR80PSV IRStandard recovery diode
70UR60 IRStandard recovery diode
SD600N20PSC IRStandard recovery diode
ST230S12M1VL IRPhase control thyristor
303U200P3 IRStandard recovery diode
IRG4BC40W IRInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.05V @ VGE = 15V, IC = 20A
SD253R08S15PSV IRFast recovery diode
IRKT50008 IRThyristor/diode and thyristor/thyristor
ST110S16P0L IRPhase control thyristor
ST303C08LHK0 IRInverter grade thyristor
305UR80P4 IRStandard recovery diode
ST303C08CHK3L IRInverter grade thyristor
SD103N04S10PBC IRFast recovery diode
IRF5305S IRHEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.06 Ohm, ID = -31A
ST230S08P1L IRPhase control thyristor
70UFR120YPD IRStandard recovery diode
SD203N16S15MV IRFast recovery diode
IRF3415S IRHEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.042 Ohm, ID = 43A
ST303S10PFN3 IRInverter grade thyristor
ST330C16L2 IRPhase control thyristor
IR51HD310 IRSelf-oscillating half-bridge
ST300C18L1 IRPhase control thyristor
SD600R08PTC IRStandard recovery diode
SD453R16S30PTC IRFast recovery diode

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