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D153N12S10PV IRFP250 16TTS12STRR SD233R40S50MTC 305UR120P2 ST280C06C0L 301UR200P2 SD203N25S15MBC IRF9530NL ST280CH06C2L SD1553C28S30K IRF3707 SD203R14S20MBC IRF640NS ST333S04MFM3L SD203R12S20PBC IRFU120N ST110S14P0L SD203N08S10PC ST330C04L3 307URA250P2 SD103R16S10PBV IRG4PC50W IR

IR Datasheets Catálogo-159

Nome do ítemFabricanteAplicativo
SD600R32PSC IRStandard recovery diode
45LFR5 IRStandard recovery diode
SD153N12S10PV IRFast recovery diode
IRFP250 IRN-channel NEXFET, 200V, 33A
16TTS12STRR IRSurface mountable phase control SCR
SD233R40S50MTC IRFast recovery diode
305UR120P2 IRStandard recovery diode
ST280C06C0L IRPhase control thyristor
301UR200P2 IRStandard recovery diode
SD203N25S15MBC IRFast recovery diode
IRF9530NL IRHEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.20 Ohm, ID = -14A
ST280CH06C2L IRPhase control thyristor
SD1553C28S30K IRFast recovery diode
IRF3707 IRHEXFET power MOSFET. VDSS = 30V, RDS(on) = 12.5 mOhm, ID = 62A
SD203R14S20MBC IRFast recovery diode
IRF640NS IRN-channel power MOSFET for fast switching applications, 200V, 18A
ST333S04MFM3L IRInverter grade thyristor
SD203R12S20PBC IRFast recovery diode
IRFU120N IRHEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.21 Ohm, ID = 9.4A
ST110S14P0L IRPhase control thyristor
SD203N08S10PC IRFast recovery diode
ST330C04L3 IRPhase control thyristor
307URA250P2 IRStandard recovery diode
SD103R16S10PBV IRFast recovery diode
IRG4PC50W IRInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.3V @ VGE = 15V, IC = 27A
IRF9140 IRHEXFET transistor thru-hole. BVDS = -100V, RDS(on) = 0.2 Ohm , ID = -18A
IRFU9220 IRHEXFET power MOSFET. VDSS = -200V, RDS(on) = 1.5 Ohm, ID = -3.6A
IRFSL17N20D IRHEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.17 Ohm, ID = 16A
SD103R20S15MC IRFast recovery diode
SD103N08S20PBC IRFast recovery diode

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