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SD500N30MSC ST103S08PFN1L ST223C04CHK2 IRG4PC40 IRF5Y5305CM SD203R12S20MSC ST700C12L0 301UA120P2 IR2127S ST300C20C3 SD600N28PSC IRF440 SD103R08S20PC IRF1407L IRG4PC30KD SD150R20PC IRFU3303 ST303C12HK3L SD253N16S15PSV ST330C14C3 IRF3709L ST1200C14K1 ST330S04P1L SD253R08S15MBV SD1

IR Datasheets Catálogo-16

Nome do ítemFabricanteAplicativo
110RKI80S90 IRPhase control thyristor
IRHF9130 IRHEXFET transistor
SD500N30MSC IRStandard recovery diode
ST103S08PFN1L IRInverter grade thyristor
ST223C04CHK2 IRInverter grade thyristor
IRG4PC40 IRInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.50V @ VGE = 15V, IC = 27A
IRF5Y5305CM IRHEXFET power MOSFET thru-hole. BVDSS = -55V, RDS(on) = 0.065 Ohm, ID = -18A
SD203R12S20MSC IRFast recovery diode
ST700C12L0 IRPhase control thyristor
301UA120P2 IRStandard recovery diode
IR2127S IRCurrent limiting single channel driver
ST300C20C3 IRPhase control thyristor
SD600N28PSC IRStandard recovery diode
IRF440 IRHEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.85 Ohm, ID = 8.0A
SD103R08S20PC IRFast recovery diode
IRF1407L IRHEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.0078 Ohm, ID = 100A.
IRG4PC30KD IRInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A
SD150R20PC IRStandard recovery diode
IRFU3303 IRHEXFET power MOSFET. VDSS = 30V, RDS(on) = 0.031 Ohm, ID = 33A
ST303C12HK3L IRInverter grade thyristor
SD253N16S15PSV IRFast recovery diode
ST330C14C3 IRPhase control thyristor
IRF3709L IRHEXFET power MOSFET. VDSS = 30V, RDS(on) = 9.0 mOhm, ID = 90A
ST1200C14K1 IRPhase control thyristor
ST330S04P1L IRPhase control thyristor
SD253R08S15MBV IRFast recovery diode
SD153N12S10MV IRFast recovery diode
SD253R10S15MV IRFast recovery diode
IRF1104 IRHEXFET power MOSFET. VDSS = 40V, RDS(on) = 0.009 Ohm, ID = 100A.
IRHM7C50SE IRHEXFET transistor

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