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1 305UA80P2 SD300N16MBV IRGB420UD2 ST280S06M2VL SD103R14S15MC 309U80 IRF820AL ST730C08L1 ST280S06M1V SD253N14S20PBV 303UR160P2 SD233R40S50MSC IRF460 SD153R16S10MSV SD253N08S15PV 181RKI40S90 ST230S14P0 ST230S12P2VL SD150N12MBC ST330C16L1 IRF3205 IRFI360 IRFD9220 307URA250P5 301UA1

IR Datasheets Catálogo-18

Nome do ítemFabricanteAplicativo
305UR200P5 IRStandard recovery diode
ST300C16C1 IRPhase control thyristor
305UA80P2 IRStandard recovery diode
SD300N16MBV IRStandard recovery diode
IRGB420UD2 IRInsulated gate bipolar transistor
ST280S06M2VL IRPhase control thyristor
SD103R14S15MC IRFast recovery diode
309U80 IRStandard recovery diode
IRF820AL IRHEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A
ST730C08L1 IRPhase control thyristor
ST280S06M1V IRPhase control thyristor
SD253N14S20PBV IRFast recovery diode
303UR160P2 IRStandard recovery diode
SD233R40S50MSC IRFast recovery diode
IRF460 IRHEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.27 Ohm, ID = 21A
SD153R16S10MSV IRFast recovery diode
SD253N08S15PV IRFast recovery diode
181RKI40S90 IRPhase control thyristor
ST230S14P0 IRPhase control thyristor
ST230S12P2VL IRPhase control thyristor
SD150N12MBC IRStandard recovery diode
ST330C16L1 IRPhase control thyristor
IRF3205 IRHEXFET power MOSFET. VDSS = 55V, RDS(on) = 8.0 mOhm, ID = 110A
IRFI360 IRHEXFET transistor (N-channel). BVDSS = 400V, RDS(on) = 0.20 Ohm, ID = 25 A
IRFD9220 IRHEXFET power MOSFET. VDSS = -200V, RDS(on) = 1.5 Ohm, ID = -0.56 A
307URA250P5 IRStandard recovery diode
301UA120P3 IRStandard recovery diode
IRF7807D2 IRFETKY MOSFET and schottky diode. VDS = 30V, RDS(on) =25mOhm
ST333S04MFM1 IRInverter grade thyristor
IRFP31N50L IRHEXFET power MOSFET. VDSS = 500 V, RDS(on) = 0.15 Ohm, ID = 31 A

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