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IRU1050CD ST230C14C0 ST303C12CHK3 SD110OC12L ST303S04PFN1 IRFPC60 SD263C30S50L ST223S08MFN2L IRF540NS SD500N36PTC JANTXV2N6758 SD203R08S15PBC 307U120P4 305U80 IRF1407S 300UFR160YPD IRG4BC10KD ST173S12MFK2L ST330S14P3L SD853C36S50K SD80OC40L ST103S08PFN0 ST1230C08K1 ST173C12CHK2L

IR Datasheets Catálogo-32

Nome do ítemFabricanteAplicativo
IRFPC40 IRHEXFET power MOSFET. VDSS = 600 V, RDS(on) = 1.2 Ohm, ID = 6.8 A
ST2100C34R1 IRPhase control thyristor
IRU1050CD IR5A low dropout positive adjustable regulator
ST230C14C0 IRPhase control thyristor
ST303C12CHK3 IRInverter grade thyristor
SD110OC12L IRStandard recovery diode
ST303S04PFN1 IRInverter grade thyristor
IRFPC60 IRHEXFET power MOSFET. VDSS = 600 V, RDS(on) = 0.40 Ohm, ID = 16 A
SD263C30S50L IRFast recovery diode
ST223S08MFN2L IRInverter grade thyristor
IRF540NS IRHEXFET power MOSFET. VDSS = 100V, RDS(on) = 44 mOhm, ID = 33A
SD500N36PTC IRStandard recovery diode
JANTXV2N6758 IRHEXFET power mosfet
SD203R08S15PBC IRFast recovery diode
307U120P4 IRStandard recovery diode
305U80 IRStandard recovery diode
IRF1407S IRHEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.0078 Ohm, ID = 100A.
300UFR160YPD IRStandard recovery diode
IRG4BC10KD IRInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A
ST173S12MFK2L IRInverter grade thyristor
ST330S14P3L IRPhase control thyristor
SD853C36S50K IRFast recovery diode
SD80OC40L IRStandard recovery diode
ST103S08PFN0 IRPhase control thyristor
ST1230C08K1 IRPhase control thyristor
ST173C12CHK2L IRInverter grade thyristor
IRF840AS IRHEXFET power MOSFET. VDS = 500V, RDS(on) = 0.85 Ohm , ID = 8.0A
SD300R08PBC IRStandard recovery diode
IRG4BC20U IRInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 6.5A
309U200P3 IRStandard recovery diode

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