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2UFR80A IRF1405S IRF5N5210 ST180C16C2 SD1053C18S30L IRGPC20F SD203R25S10MBC SD203N08S20MBC 307UA200 SD150OC25L ST083S08PFK0 SD253N04S20MBV IRFIB7N50A 200HFR40MSV SD203N16S15MSV IRG4BC15UD-L SD300R08MSC ST330C04C0 ST183C04CHK2 IRF5850 SD500N40MSC IRHN2C50SE ST2600C20R0 SD103N04S10

IR Datasheets Catálogo-61

Nome do ítemFabricanteAplicativo
45LFR30 IRStandard recovery diode
IRFY9130CM IRHEXFET power mosfet
72UFR80A IRStandard recovery diode
IRF1405S IRHEXFET power MOSFET. VDSS = 55V, RDS(on) = 5.3 mOhm, ID = 131A.
IRF5N5210 IRHEXFET power MOSFET surface mount. BVDSS = -100V, RDS(on) = 0.060 Ohm, ID = -31A
ST180C16C2 IRPhase control thyristor
SD1053C18S30L IRFast recovery diode
IRGPC20F IRInsulated gate bipolar transistor
SD203R25S10MBC IRFast recovery diode
SD203N08S20MBC IRFast recovery diode
307UA200 IRStandard recovery diode
SD150OC25L IRStandard recovery diode
ST083S08PFK0 IRInverter grade thyristor
SD253N04S20MBV IRFast recovery diode
IRFIB7N50A IRHEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.52 Ohm, ID = 6.6 A
200HFR40MSV IRStandard recovery diode
SD203N16S15MSV IRFast recovery diode
IRG4BC15UD-L IRInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8A
SD300R08MSC IRStandard recovery diode
ST330C04C0 IRPhase control thyristor
ST183C04CHK2 IRInverter grade thyristor
IRF5850 IRHEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.135 Ohm
SD500N40MSC IRStandard recovery diode
IRHN2C50SE IRHEXFET transistor
ST2600C20R0 IRPhase control thyristor
SD103N04S10PSC IRFast recovery diode
307UR160P5 IRStandard recovery diode
300UR160AYPD IRStandard recovery diode
ST330S16P1 IRPhase control thyristor
IRFZ44VZL IRN-channel power MOSFET for fast switching applications, 60V, 57A

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