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S12PFK2 ST330C04C1L SD153R04S10MSV IRFZ48R SD203N10S15PBC ST1200C20K1 IRF3710 SD203R20S15PC IRFU9120N IRF9410 ST1200C20K2 IRF7504 IRF130 IRG4PH40UD IRG4BC40U SD600R20MC SD200N16PV 302UFR120PD ST303C12CHK0L ST330S14M3 ST103S08PFN1 IRF530NS IRF9240 SD300N12MBC 307URA200P4 SD300R25M

IR Datasheets Catálogo-76

Nome do ítemFabricanteAplicativo
SD203N12S10MBC IRFast recovery diode
ST173S12PFK2 IRInverter grade thyristor
ST330C04C1L IRPhase control thyristor
SD153R04S10MSV IRFast recovery diode
IRFZ48R IRPower MOSFET, 60V, 50A
SD203N10S15PBC IRFast recovery diode
ST1200C20K1 IRPhase control thyristor
IRF3710 IRHEXFET power MOSFET. VDSS = 100V, RDS(on) = 23 mOhm, ID = 57A
SD203R20S15PC IRFast recovery diode
IRFU9120N IRHEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.48 Ohm, ID = -6.6A
IRF9410 IRHEXFET power MOSFET. VDSS = 30V, RDS(on) = 0.030 Ohm.
ST1200C20K2 IRPhase control thyristor
IRF7504 IRHEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.27 Ohm
IRF130 IRRepetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =100V, RDS(on) = 0.18 Ohm, ID = 14A
IRG4PH40UD IRInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.43V @ VGE = 15V, IC = 21A
IRG4BC40U IRInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.72V @ VGE = 15V, IC = 20A
SD600R20MC IRStandard recovery diode
SD200N16PV IRStandard recovery diode
302UFR120PD IRStandard recovery diode
ST303C12CHK0L IRInverter grade thyristor
ST330S14M3 IRPhase control thyristor
ST103S08PFN1 IRPhase control thyristor
IRF530NS IRHEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.11 Ohm, ID = 17A
IRF9240 IRHEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
SD300N12MBC IRStandard recovery diode
307URA200P4 IRStandard recovery diode
SD300R25MBC IRStandard recovery diode
SD150R14PBC IRStandard recovery diode
309U250P2 IRStandard recovery diode
IRG4BC30KD-S IRInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A

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