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IRGPH50MD2 IRG4PC30S IRL3803 IRF460 303UR80P5 ST330S12M1L 307URA160P3 ST330S04P0 ST333C08CHK3L IRFU3706 ST180S12M1VL SD253N16S15MBV IRFPC50A IR6220 IRF3708 45LF20 IRFU120N SD103N04S20PBC IRF340 IRC740 ST330C08C1 ST2100C32R1L 309UA160P5 SD200N04MBC 301UR80 IRU1075CT SD400R04PSC S

IR Datasheets Catálogo-84

Nome do ítemFabricanteAplicativo
ST230C04C1L IRPhase control thyristor
47LR160D IRStandard recovery diode
IRGPH50MD2 IRInsulated gate bipolar transistor with ultrafast soft recovery diode
IRG4PC30S IRInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 18A
IRL3803 IRN-channel power MOSFET for logic-level gate drive applications, 30V, 140A
IRF460 IRHEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.27 Ohm, ID = 21A
303UR80P5 IRStandard recovery diode
ST330S12M1L IRPhase control thyristor
307URA160P3 IRStandard recovery diode
ST330S04P0 IRPhase control thyristor
ST333C08CHK3L IRInverter grade thyristor
IRFU3706 IRHEXFET power MOSFET. VDSS = 20V, RDS(on) = 9.0mOhm, ID = 75A
ST180S12M1VL IRPhase control thyristor
SD253N16S15MBV IRFast recovery diode
IRFPC50A IRHEXFET power MOSFET. VDSS = 600 V, RDS(on) = 0.58 Ohm, ID = 11 A
IR6220 IRIntelligent high side mosfet power switch
IRF3708 IRHEXFET power MOSFET. VDSS = 30V, RDS(on) = 12 mOhm, ID = 62A
45LF20 IRStandard recovery diode
IRFU120N IRHEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.21 Ohm, ID = 9.4A
SD103N04S20PBC IRFast recovery diode
IRF340 IRHEXFET transistor thru-hole. VDSS = 400V, RDS(on) = 0.55 Ohm, ID = 10A
IRC740 IRHEXFET power MOSFET. Continuous drain current 10A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 400V. Drain-to-source on-resistance 0.55 Ohm
ST330C08C1 IRPhase control thyristor
ST2100C32R1L IRPhase control thyristor
309UA160P5 IRStandard recovery diode
SD200N04MBC IRStandard recovery diode
301UR80 IRStandard recovery diode
IRU1075CT IR7.5A low dropout positive adjustable regulator
SD400R04PSC IRStandard recovery diode
ST330C08C1L IRPhase control thyristor

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