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S10PBC SD203R08S15PSC ST203S10MFJ1L CPV364MF CPV363MU 309UR80 ST103S08PFN2 SD153N08S15PSV ST333S04PFM0 ST330S14P3 SD203R25S10MSC SD103R14S15PSC ST223S08MFN0L IR2127 IRFI840G IRG4PH20KD IRF5810 SD403C12S15C 305UR120P4 309UA120P5 IRFR5505 IRF9540N 309UA120 IRGBC30M-S 200HFR80PV ST7

IR Datasheets Catálogo-89

Nome do ítemFabricanteAplicativo
ST180S04M1L IRPhase control thyristor
SD203N25S10PBC IRFast recovery diode
SD203R08S15PSC IRFast recovery diode
ST203S10MFJ1L IRInverter grade thyristor
CPV364MF IRIGBT SIP module
CPV363MU IRIGBT SIP module
309UR80 IRStandard recovery diode
ST103S08PFN2 IRPhase control thyristor
SD153N08S15PSV IRFast recovery diode
ST333S04PFM0 IRInverter grade thyristor
ST330S14P3 IRPhase control thyristor
SD203R25S10MSC IRFast recovery diode
SD103R14S15PSC IRFast recovery diode
ST223S08MFN0L IRInverter grade thyristor
IR2127 IRCurrent limiting single channel driver
IRFI840G IRHEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.85 Ohm, ID = 4.6 A
IRG4PH20KD IRInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 3.17V @ VGE = 15V, IC = 5.0A
IRF5810 IRHEXFET power MOSFET. VDSS = -20V, RDS(on) = 90 mOhm, ID = -2.9A @ VGS = -4.5V, RDS(on) = 135 mOhm, ID = -2.3A @ VGS = -2.5V
SD403C12S15C IRFast recovery diode
305UR120P4 IRStandard recovery diode
309UA120P5 IRStandard recovery diode
IRFR5505 IRHEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.11 Ohm, ID = -18A
IRF9540N IRHEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.117 Ohm, ID = -23A
309UA120 IRStandard recovery diode
IRGBC30M-S IRInsulated gate bipolar transistor
200HFR80PV IRStandard recovery diode
ST700C22L0L IRPhase control thyristor
SD203N08S10PSC IRFast recovery diode
SD150N20MSC IRStandard recovery diode
303UR120P5 IRStandard recovery diode

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