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IR2130J ST183S04MFN2 301UA160P4 IR6224 SD203R12S15MSC ST083S10PFK1L 45LFR40 20ETS16 SD153N14S10PV 307UA200P2 ST733C08LHK0 ST2600C24R2 302UR160AYPD SD403C14S10C ST333C08LHK3 SD253N16S20PSV IRFP3415 IRHNA8160 ST173S10MFK1L SD500N30PSC SD603C16S15C ST700C20L2 303UR120P4 IRG4PSC71UD

IR Datasheets Catálogo-9

Nome do ítemFabricanteAplicativo
ST180C08C2 IRPhase control thyristor
IRG4RC10K IRInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A
IR2130J IR3-phase bridge driver
ST183S04MFN2 IRInverter grade thyristor
301UA160P4 IRStandard recovery diode
IR6224 IRIntelligent high side mosfet power switch
SD203R12S15MSC IRFast recovery diode
ST083S10PFK1L IRInverter grade thyristor
45LFR40 IRStandard recovery diode
20ETS16 IRSurface mountable input rectifier diode
SD153N14S10PV IRFast recovery diode
307UA200P2 IRStandard recovery diode
ST733C08LHK0 IRInverter grade thyristor
ST2600C24R2 IRPhase control thyristor
302UR160AYPD IRStandard recovery diode
SD403C14S10C IRFast recovery diode
ST333C08LHK3 IRInverter grade thyristor
SD253N16S20PSV IRFast recovery diode
IRFP3415 IRHEXFET power MOSFET. VDSS = 150 V, RDS(on) = 0.042 Ohm, ID = 43 A
IRHNA8160 IRHEXFET transistor
ST173S10MFK1L IRInverter grade thyristor
SD500N30PSC IRStandard recovery diode
SD603C16S15C IRFast recovery diode
ST700C20L2 IRPhase control thyristor
303UR120P4 IRStandard recovery diode
IRG4PSC71UD IRInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.67V @ VGE = 15V, IC = 60A
IRGP440UD2 IRInsulated gate bipolar transistor with ultrafast soft recovery diode
ST1200C16K1L IRPhase control thyristor
300UFR160AYPD IRStandard recovery diode
IRG4BC15UD IRInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8A

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