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3N15D ST303C12CHK2L IRFR9120 SD153N10S10PSV ST3230C18R2L ST303C12CHK0 SD203N12S10PSC IRGPC30UD2 ST2100C42R0L SD203R25S20PSC 300UFR160PD JANTXV2N6766 SD233R36S50PSC SD103N12S20MC SD453N25S30PSC SD153N08S15MSV IRU1010-33CY ST230S14P2 IRG4PC30W IRF7416 200HFR120MV 307URA80P4 IRKT500

IR Datasheets Catálogo-92

Nome do ítemFabricanteAplicativo
SD253R10S20MSV IRFast recovery diode
IRFR13N15D IRHEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.18 Ohm, ID = 14A
ST303C12CHK2L IRInverter grade thyristor
IRFR9120 IRHEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.60 Ohm, ID = -5.6A
SD153N10S10PSV IRFast recovery diode
ST3230C18R2L IRPhase control thyristor
ST303C12CHK0 IRInverter grade thyristor
SD203N12S10PSC IRFast recovery diode
IRGPC30UD2 IRInsulated gate bipolar transistor with ultrafast soft recovery diode
ST2100C42R0L IRPhase control thyristor
SD203R25S20PSC IRFast recovery diode
300UFR160PD IRStandard recovery diode
JANTXV2N6766 IRHEXFET power mosfet
SD233R36S50PSC IRFast recovery diode
SD103N12S20MC IRFast recovery diode
SD453N25S30PSC IRFast recovery diode
SD153N08S15MSV IRFast recovery diode
IRU1010-33CY IR1A low dropout positive fixed 3.3V regulator
ST230S14P2 IRPhase control thyristor
IRG4PC30W IRInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.70V @ VGE = 15V, IC = 12A
IRF7416 IRHEXFET power MOSFET. VDSS = -30V, RDS(on) = 0.02 Ohm.
200HFR120MV IRStandard recovery diode
307URA80P4 IRStandard recovery diode
IRKT50016 IRThyristor/diode and thyristor/thyristor
ST110S16P1L IRPhase control thyristor
303URA200P2 IRStandard recovery diode
ST230C08C0 IRPhase control thyristor
ST2100C34R2L IRPhase control thyristor
ST110S04P2L IRPhase control thyristor
IRFB52N15D IRHEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.032 Ohm, ID = 60A

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