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34S201K 20KW256A 1.5KE43A 20KW34 SMCJ130A SMBJ6.5 SMAJ17 MAX40-24.0C MDE-20D561K ICTE-10C MAX20-85.0C MAX20-48.0CA 1.5KE20 P6KE110 20KW56A P6KE300 15KP22A SMDJ22A MDE-34S331K MAX40-33.0CA P6KE43A MAX40-7.0C SMDJ51 MAX20-120.0C 15KW40 MDE-20D390K SMAJ85A 1.5KE47

MDE Semiconductor Datasheets Catálogo-16

Nome do ítemFabricanteAplicativo
P4KE20A MDE Semiconductor17.10V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
SMCJ10A MDE Semiconductor10.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
MDE-34S201K MDE Semiconductor200V; max peak current40000A; Tmax=11; metal oxide varistor. High energy series 34mm single square
20KW256A MDE Semiconductor256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
1.5KE43A MDE Semiconductor36.80V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor
20KW34 MDE Semiconductor34.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
SMCJ130A MDE Semiconductor130.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
SMBJ6.5 MDE Semiconductor6.50V; 10mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
SMAJ17 MDE Semiconductor17.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
MAX40-24.0C MDE Semiconductor24.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
MDE-20D561K MDE Semiconductor560V; max peak current10000A; metal oxide varistor. Standard D series 20mm disc
ICTE-10C MDE Semiconductor10.00V; 90A ;1500W peak pulse power; glass passivated junction transient voltage suppressor
MAX20-85.0C MDE Semiconductor85.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
MAX20-48.0CA MDE Semiconductor48.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
1.5KE20 MDE Semiconductor15.30V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor
P6KE110 MDE Semiconductor89.20V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
20KW56A MDE Semiconductor56.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
P6KE300 MDE Semiconductor243.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
15KP22A MDE Semiconductor22.0V; 10mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
SMDJ22A MDE Semiconductor22.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
MDE-34S331K MDE Semiconductor330V; max peak current40000A; Tmax=12; metal oxide varistor. High energy series 34mm single square
MAX40-33.0CA MDE Semiconductor33.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
P6KE43A MDE Semiconductor36.80V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
MAX40-7.0C MDE Semiconductor7.00V; 50mA ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
SMDJ51 MDE Semiconductor51.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
MAX20-120.0C MDE Semiconductor120.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
15KW40 MDE Semiconductor40.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
MDE-20D390K MDE Semiconductor39V; max peak current3000A; metal oxide varistor. Standard D series 20mm disc
SMAJ85A MDE Semiconductor85.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
1.5KE47 MDE Semiconductor38.10V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor

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