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SA16A 15KP64A MDE-53D471K SMDJ5.0 SMCJ22 MPTE-12C P4KE39 SA11 SMBJ51A MDE-25D681K 15KW130A SMDJ8.5 SMLJ24 SMDJ51A SA75A P4KE12 1.5KE11A MAX20-11.0C 20KW160A SMDJ64 3T130B MAX20-60.0CA 20KW24A 1.5KE180 SA6.5 SMAJ8.5 MAX40-85.0C MPTE-10

MDE Semiconductor Datasheets Catálogo-6

Nome do ítemFabricanteAplicativo
MDE-25S241K MDE Semiconductor240V; max peak current20000A; metal oxide varistor. Standard S series 25mm disc
15KP200 MDE Semiconductor200V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
SA16A MDE Semiconductor16.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
15KP64A MDE Semiconductor64V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
MDE-53D471K MDE Semiconductor470V; max peak current70000A; metal oxide varistor. High energy series 53mm single disc
SMDJ5.0 MDE Semiconductor5.00V; 10mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
SMCJ22 MDE Semiconductor22.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
MPTE-12C MDE Semiconductor12.00V; 70A ;1500W peak pulse power; glass passivated junction transient voltage suppressor
P4KE39 MDE Semiconductor31.60V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
SA11 MDE Semiconductor11.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
SMBJ51A MDE Semiconductor51.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
MDE-25D681K MDE Semiconductor680V; max peak current18000A; metal oxide varistor. Standard D series 25mm disc
15KW130A MDE Semiconductor130.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
SMDJ8.5 MDE Semiconductor8.50V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
SMLJ24 MDE Semiconductor24.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
SMDJ51A MDE Semiconductor51.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
SA75A MDE Semiconductor75.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
P4KE12 MDE Semiconductor9.72V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
1.5KE11A MDE Semiconductor9.40V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications
MAX20-11.0C MDE Semiconductor11.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
20KW160A MDE Semiconductor160.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
SMDJ64 MDE Semiconductor64.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
3T130B MDE Semiconductor120V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor
MAX20-60.0CA MDE Semiconductor60.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
20KW24A MDE Semiconductor24.00V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
1.5KE180 MDE Semiconductor146.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor
SA6.5 MDE Semiconductor6.50V; 10mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
SMAJ8.5 MDE Semiconductor8.50V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
MAX40-85.0C MDE Semiconductor85.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
MPTE-10 MDE Semiconductor10.00V; 90A ;1500W peak pulse power; glass passivated junction transient voltage suppressor

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