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40-110.0C 3KP6.5 30KW36A 15KP240 MDE-10D241K P4KE350A SMBJ6.5A SMLJ40 1.5KE200 3KP7.0A SMBJ90A SMBJ28A 1.5KE18A P4KE30A SMDJ40A MDE-10D181K SA85A P6KE11A MDE-25D221K

MDE Semiconductor Datasheets Catálogo-61

Nome do ítemFabricanteAplicativo
P4KE160A MDE Semiconductor136.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
P6KE33A MDE Semiconductor28.20V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
MAX40-110.0C MDE Semiconductor110.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
3KP6.5 MDE Semiconductor6.50V; 50mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
30KW36A MDE Semiconductor36.00V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
15KP240 MDE Semiconductor240V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
MDE-10D241K MDE Semiconductor240V; max peak current3500A; metal oxide varistor. Standard D series 10mm disc
P4KE350A MDE Semiconductor300.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
SMBJ6.5A MDE Semiconductor6.50V; 10mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
SMLJ40 MDE Semiconductor40.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
1.5KE200 MDE Semiconductor162.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications
3KP7.0A MDE Semiconductor7.00V; 50mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
SMBJ90A MDE Semiconductor90.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
SMBJ28A MDE Semiconductor28.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
1.5KE18A MDE Semiconductor14.50V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor
P4KE30A MDE Semiconductor25.60V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
SMDJ40A MDE Semiconductor40.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
MDE-10D181K MDE Semiconductor180V; max peak current3500A; metal oxide varistor. Standard D series 10mm disc
SA85A MDE Semiconductor85.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
P6KE11A MDE Semiconductor9.40V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
MDE-25D221K MDE Semiconductor220V; max peak current18000A; metal oxide varistor. Standard D series 25mm disc

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