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As Últimas Magnatec Datasheet PDF

Nome do ítemAplicativo
BUZ905DP P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -160V.
BCU83 NPN epitaxial planar silicon tpansistor. Ideal for high current driver applications reguiring low loss devices.
BUZ901DP N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V.
BUZ903 N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V.
SMX35 Silicon NPN epitaxial planar power transistor.
BCU83D NPN epitaxial planar silicon tpansistor. Ideal for high current switching application.
BUZ900P N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V.
BUZ900P N-channel power MOSFET for audio applications, 160V
BUZ905P P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -160V.
BUL74B Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
BCU81 NPN epitaxial planar silicon tpansistor. Ideal for high current driver applications requiring low loss devices.
BUZ906P P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V.
BUZ900D N-channel power MOSFET for audio applications, 160V
BUZ906X4S P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V.
BUZ906DP P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V.
BUZ901P N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V.
BCU86 NPN epitaxial planar silicon tpansistor. Ideal for high current switching application.
BUZ901D N-channel power MOSFET for audio applications, 200V
BUZ907D P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -220V.
BUZ902P N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ908D P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -250V.
BUL54A Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
BUZ908P P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -250V.
BUZ903D N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V.
BUZ907P P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -220V.
T64 PNP silicon darlington power transistor. Complementary epitaxial base transistors in monolithic darlington circuit for audio output stages and general amplifier and switching applications.
BCU86D NPN epitaxial planar silicon tpansistor. Ideal for high current switching application.
SMX37 Silicon NPN epitaxial planar power transistor.

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