Path:okDatasheet > Catalog Datasheet > Magnatec Datasheet > Magnatec-2

08P BUL54A BUZ908D BUZ902P BUZ907D BUZ901D BCU86 BUZ901P BUZ906DP BUZ906X4S BUZ900D BUZ906P BCU81 BUL74B BUZ905P BUZ900P BUZ900P BCU83D SMX35 BUZ903 BUZ901DP BCU83 BUZ905DP

Magnatec Datasheets Catálogo-2

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BUZ907P MagnatecP-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -220V.
BUZ903D MagnatecN-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V.
BUZ908P MagnatecP-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -250V.
BUL54A MagnatecAdvanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
BUZ908D MagnatecP-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -250V.
BUZ902P MagnatecN-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ907D MagnatecP-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -220V.
BUZ901D MagnatecN-channel power MOSFET for audio applications, 200V
BCU86 MagnatecNPN epitaxial planar silicon tpansistor. Ideal for high current switching application.
BUZ901P MagnatecN-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V.
BUZ906DP MagnatecP-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V.
BUZ906X4S MagnatecP-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V.
BUZ900D MagnatecN-channel power MOSFET for audio applications, 160V
BUZ906P MagnatecP-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V.
BCU81 MagnatecNPN epitaxial planar silicon tpansistor. Ideal for high current driver applications requiring low loss devices.
BUL74B MagnatecAdvanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
BUZ905P MagnatecP-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -160V.
BUZ900P MagnatecN-channel power MOSFET for audio applications, 160V
BUZ900P MagnatecN-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V.
BCU83D MagnatecNPN epitaxial planar silicon tpansistor. Ideal for high current switching application.
SMX35 MagnatecSilicon NPN epitaxial planar power transistor.
BUZ903 MagnatecN-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V.
BUZ901DP MagnatecN-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V.
BCU83 MagnatecNPN epitaxial planar silicon tpansistor. Ideal for high current driver applications reguiring low loss devices.
BUZ905DP MagnatecP-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -160V.

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