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2EZ100 spec: Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 100.0 V. Test current Izt = 5.0 mA.

2EZ100 similares

  • 2EZ100
    • Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 100.0 V. Test current Izt = 5.0 mA.
  • 2EZ11
    • Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 11.0 V. Test current Izt = 45.5 mA.
  • 2EZ110
    • Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 110.0 V. Test current Izt = 4.5 mA.
  • 2EZ110
    • Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 110.0 V. Test current Izt = 4.5 mA.
  • 2EZ12
    • Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 12.0 V. Test current Izt = 41.5 mA.
  • 2EZ13
    • Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 13.0 V. Test current Izt = 38.5 mA.
  • 2EZ14
    • Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 14.0 V. Test current Izt = 35.7 mA.
  • 2EZ140
    • Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 140.0 V. Test current Izt = 3.6 mA.

2EZ100 Datasheet e Spec

Fabricante : PanJit 

Embalagem : D0-15 

Pins : 2 

Temperature : Min -55 °C | Max 150 °C

Tamanho : 134 KB

Aplicativo : Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 100.0 V. Test current Izt = 5.0 mA. 

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