F2201 spec: 2 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2201 similares

F2201
- 2 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F2202
- 4 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2201 Datasheet e Spec

Fabricante : Polyfet RF

Embalagem :

Pins : 2

Temperature : Min -65 °C | Max 150 °C

Tamanho : 38 KB

Aplicativo : 2 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor