| Nome do ítem | Fabricante | Aplicativo |
|---|
| C7390-07 | Hamamatsu | Effective X-ray tube voltage range40 to 160kV; resolution 512mm1280pixels; 256mm640pixels; W-ray line sensor camera |
| L8933-06 | Hamamatsu | 0.6-2.2W; 2V; CW laser diode high optical power from a single chip |
| L7685 | Hamamatsu | 60W; 300-1000V; xenon flash lamp |
| H8567-02 | Hamamatsu | Input voltage 11.5-15.5V; max input current7-25mA; compact side-on PMT photosensor module |
| P1201-04 | Hamamatsu | 100Vdc; 50mW; CdS photoconductive cell standard type designed for general purpose, wide application |
| L4342-01 | Hamamatsu | 150W; metal halide lamp short-arc type |
| L8077 | Hamamatsu | Number of control pixels approx.230.000; VGA PPM (progarmmable phase modulator) |
| R3886 | Hamamatsu | Spectral responce300-650nm; 1250Vdc; 0.1mA; photomultiplier tube |
| G5851-103 | Hamamatsu | Reverse voltage2V; spectral response range0.9-1.7um; InGaAs PIN photodiode long wavelength type. For NIR (near infrared) photometry, optical power meter, gas analyzer |
| C3866 | Hamamatsu | 50 Ohm; photon counting unit |
| H7422-02 | Hamamatsu | Input voltage 11.5-15.5V; max input current30mA; photosensor module in metal package PMT with cooler |
| G9128-23 | Hamamatsu | Connector type MU; supply voltage 20V; InGaAs PIN photodiode with preamp mini-DIL type, 1.3/1.55um, 156, 622 Mbps/1.25, 2.5Gbps |
| L2917 | Hamamatsu | 350W; super-quiet mercury-xenon lamp deep UV light source for precision measurement |
| G8211-21 | Hamamatsu | Supply voltage0.3-5.5V; InGaAs PIN photodiode with preamp pigtail type, 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH |
| C7563 | Hamamatsu | Supply voltage+-18V; signal processing circuit for 2-D PSD |
| F2224-34S | Hamamatsu | Circular MCP and assembly series. For analytical instruments, electron tibe, cosmic measurement, high energy physics |
| C7390-01 | Hamamatsu | Effective X-ray tube voltage range40 to 160kV; resolution 512mm1280pixels; 256mm640pixels; W-ray line sensor camera |
| G6742-003 | Hamamatsu | Active area size0.3mm; spectral response range0.9-1.7um; InGaAs PIN photodiode surface mount type. For laser diode monitors |
| R-105 | Hamamatsu | Spectral response 300 to 650nm; photomultiplier tube |
| G8796-44 | Hamamatsu | Supply voltage0.5-6V; InGaAs PIN photodiode with preamp receptacle type, 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH |
| E1168-13 | Hamamatsu | For low voltage housing, power and singal cables, connector adapter |
| F2813-33S | Hamamatsu | Rectangular MCP and assembly series. For detection and imaging of electron, ions, VUV lights, X-rays and V-rays mass spectroscopy, energy spectroscopy and high-speed response CRTs |
| P2748-42 | Hamamatsu | Allowable current20mA; MCT photoconductive detector dewar type detector with high sensitivity and high-speed response in long wavelength range |
| C4880-50-26W | Hamamatsu | 16-bit idigital CCD camera. For X-ray scintillator readout, readout of various fluorescences, X-ray diffraction readout, neutron radiography |
| P4247-44 | Hamamatsu | 0.5Vdc; 100mW; InSb photovoltaic detector high speed response, low-noise photovoltaic detector |
| L6112-02 | Hamamatsu | 70mA; 5V; 0.6A; high input red LED. For optical switches, etc |
| H7712-12 | Hamamatsu | Input voltage 11.5-15.5V; max input current7-25mA; compact side-on PMT photosensor module |
| M4189 | Hamamatsu | Number of frames 1,2,4(a,b),8; exposure time50ns to 1ms; framing unit |
| P722-7R | Hamamatsu | 100Vdc; 150mW; CdS photoconductive cell resin coating type. Standard type designed to withstand high voltage and high power |
| F2224-19S | Hamamatsu | Circular MCP and assembly series. For analytical instruments, electron tibe, cosmic measurement, high energy physics |
