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Palavra-chave: Hexawave Datasheet, Hexawave Data, Hexawave Data Sheet, Hexawave Inc
Hexawave Ficha Pesquisa, Últimas Hexawave Datasheets
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As Últimas Hexawave Datasheet PDF
| Nome do ítem | Aplicativo |
|---|---|
| HWS306 | GaAs MMIC SPDT switch |
| HWC34NC | 12 W C-band power FET non-via hole chip |
| HWS301 | GaAs MMIC SPDT switch |
| HWS303 | GaAs MMIC SPDT switch |
| HWL30YRA | 6 W L-band GaAs power FET |
| HWL34NC | 12 W L-band power FET non-via hole chip |
| HWF1687RA | 7.5 W L-band GaAs power FET |
| HWL34YRF | 12 W L-band GaAs power FET |
| HWL26NPA | 2 W L-band GaAs power FET |
| HWF1682RA | 20 W L-band GaAs power FET |
| HWS2352 | GaAs MMIC SPDT terminated switch |
| HWC27YC | 3.5 W C-band power FET via hole chip |
| HWL34YRA | 12 W L-band GaAs power FET |
| HWL30NPA | 2.8 W L-band GaAs power FET |
| HWS305 | GaAs MMIC SPDT switch |
| HWL30YRF | 6 W L-band GaAs power FET |
| HWL27YRA | 3.5 W L-band GaAs power FET |
| HWL27NC | 3.5 W L-band power FET via hole chip |
| HWF1686NC | 3.5 W L-band power FET non-via hole chip |
| HWL26YC | 1.7 W L-band power FET via hole chip |
| HWL23NPB | 0.7 W L-band GaAs power FET |
| HWL36YRA | 15 W L-band GaAs power FET |
| HWL32NPA | 2.8 W L-band GaAs power FET |
| HWS332 | GaAs MMIC SPDT terminated switch |
| HWL32NPA | 2.8 W L-band GaAs power FET |
| HWS332 | GaAs MMIC SPDT terminated switch |
| HWL36YRF | 15 W L-band GaAs power FET |
| HWC27NC | 3.5 W C-band power FET non-via hole chip |
Hexawave perfil
Hexawave, Inc. was established in 1991 with the goal of serving the rapidly growing wireless communication industry. The company is dedicated to developing, manufacturing, and marketing a wide range of GaAs based RF products. Headquartered in Hsinchu Science-Based industrial Park, the high-tech center of Taiwan, Hexawave has a 35,000 square ft. facility, which includes a class 100 GaAs wafer fab line, assembly and testing facility.
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