| Nome do ítem | Fabricante | Aplicativo |
|---|
| ST333S04MFM0 | IR | Inverter grade thyristor |
| 200HF80PSV | IR | Standard recovery diode |
| IRF644NS | IR | N-channel power MOSFET, 250V, 14A |
| 200HFR40PV | IR | Standard recovery diode |
| IRF7751 | IR | HEXFET power MOSFET. VDSS = -30V. RDS(on) = 35mOhm ID = -4.5A @ VGS = -10V. RDS(on) = 55mOhm, ID = -3.8A @ VGS = - 4.5V. |
| IRF540N | IR | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 44 mOhm, ID = 33A |
| ST203S12PFJ2 | IR | Inverter grade thyristor |
| SD400R24PBC | IR | Standard recovery diode |
| CPV363MK | IR | IGBT SIP module |
| IRFV260 | IR | HEXFET transistor |
| IRL3103 | IR | Power MOSFET, 30V, 64A |
| 48LF120D | IR | Standard recovery diode |
| 300HF80P | IR | Standard recovery diode |
| SD300R16PV | IR | Standard recovery diode |
| IRU1208CS | IR | 1A very low dropout positive adjustable regulator |
| IRF7603 | IR | HEXFET power MOSFET. VDSS = 30V, RDS(on) = 0.035 Ohm. |
| SD453R25S20MSC | IR | Fast recovery diode |
| 130HF120PV | IR | Standard recovery diode |
| ST330S16M1L | IR | Phase control thyristor |
| IRFB31N20D | IR | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.082 Ohm, ID = 31A |
| IRGPH50FD2 | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode |
| 309UA160P4 | IR | Standard recovery diode |
| IRC730 | IR | HEXFET power MOSFET. Continuous drain current 5.5A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 400V. Drain-to-source on-resistance 1.0 Ohm |
| SD300N32MSC | IR | Standard recovery diode |
| SD200R20PC | IR | Standard recovery diode |
| ST230S14P1L | IR | Phase control thyristor |
| ST103S04PFN1 | IR | Phase control thyristor |
| IRU1010-25CP | IR | 1A low dropout positive fixed 2.5V regulator |
| 305U200P2 | IR | Standard recovery diode |
| ST173S10MFK0 | IR | Inverter grade thyristor |
