| Nome do ítem | Fabricante | Aplicativo |
|---|
| ZMM55-B15 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 13.8-15.6 V. Test current 5 mA. +-2% tolerance. |
| SMBJ5955 | JGD | 1.5W silicon surface mount zener diode. Zener voltage 180 V. Test current 2.1 mA. +-20% tolerance. |
| 1N4933 | JGD | 1.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 50 V, max RMS voltage 35 V, max D. C blocking voltage 50 V. |
| BZX84C3V9 | JGD | 350mW zener diode, 3.9V |
| SMBJ5950 | JGD | 1.5W silicon surface mount zener diode. Zener voltage 110 V. Test current 3.4 mA. +-20% tolerance. |
| SMAJ12A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 12 V. |
| 1N752A | JGD | 500mW, silicon zener diode. Zener voltage 5.6 V. Test current 20 mA. +-5% tolerance. |
| SFR152 | JGD | Soft fast recovery rectifier. Max recurrent peak reverse voltage 100 V. Max average forward current 1.5 A. |
| SMBJ75CA | JGD | Surface mount transient voltage suppressor. Breakdown voltage 83.3 V (min), 92.1 V (max). Test current 1.0 mA. Bidirectional. |
| 3EZ140D10 | JGD | 3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, +-10% tolerance. |
| 1N4115C | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 22V. 2% tolerance. |
| KBPC808G | JGD | Single phase 8.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 800V. |
| 1N989B | JGD | 0.5W, silicon zener diode. Zener voltage 150V. Test current 0.85mA. +-5% tolerance. |
| 1N5928C | JGD | 1.5 W, silicon zener diode. Zener voltage 13V. Test current 28.8 mA. +-2% tolerance. |
| 1N5546C | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 33.0 V. Test current 1.0 mAdc. +-2% tolerance. |
| SMAJ7.0C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 7.0 V. Bidirectional. |
| KBP202 | JGD | Single-phase 2.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 200V. |
| SMAJ100 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 100 V. |
| 1N5535D | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 15.0 V. Test current 1.0 mAdc. +-1% tolerance. |
| 1N5955B | JGD | 1.5 W, silicon zener diode. Zener voltage 180 V. Test current 2.1 mA. +-5% tolerance. |
| SMAJ24C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 24 V. Bidirectional. |
| 1N5524D | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 5.6 V. Test current 3.0 mAdc. +-1% tolerance. |
| SMAJ15C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 15 V. Bidirectional. |
| 1N5917C | JGD | 1.5 W, silicon zener diode. Zener voltage 4.7V. Test current 79.8 mA. +-2% tolerance. |
| 3EZ62D1 | JGD | 3 W, silicon zener diode. Nominal voltage 62 V, current 12 mA, +-1% tolerance. |
| 1N5539 | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 19.0 V. Test current 1.0 mAdc. +-20% tolerance. |
| P4KE13A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 13 V. |
| SMAJ11 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 11 V. |
| SMAJ150CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 150 V. Bidirectional. |
| SMBJ5933 | JGD | 1.5W silicon surface mount zener diode. Zener voltage 22 V. Test current 17.0 mA. +-20% tolerance. |
