| Nome do ítem | Fabricante | Aplicativo |
|---|
| 15KW75 | MDE Semiconductor | 75.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| 15KP260 | MDE Semiconductor | 260V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| SMAJ28 | MDE Semiconductor | 28.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMAJ58 | MDE Semiconductor | 58.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| P6KE180A | MDE Semiconductor | 154.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| P4KE6.8 | MDE Semiconductor | 5.50V; 10mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| SMLJ64 | MDE Semiconductor | 64.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MAX20-54.0C | MDE Semiconductor | 54.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| 3KP30A | MDE Semiconductor | 30.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| 15KP64 | MDE Semiconductor | 64V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| LCE16 | MDE Semiconductor | 16.00V; 1mA ;1500W peak pulse power; low capacitance transient voltage suppressor. Ideal for data line applications |
| 20KW20 | MDE Semiconductor | 20.00V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| SMBJ8.0A | MDE Semiconductor | 8.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMDJ64A | MDE Semiconductor | 64.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMLJ70 | MDE Semiconductor | 70.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMLJ170A | MDE Semiconductor | 170.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| P6KE9.1 | MDE Semiconductor | 7.37V; 10mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| MDE-25S911K | MDE Semiconductor | 910V; max peak current20000A; metal oxide varistor. Standard S series 25mm disc |
| MDE-5D391K | MDE Semiconductor | 390V; max peak current800A; metal oxide varistor. Standard D series 5mm disc |
| P4KE91 | MDE Semiconductor | 73.70V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| MDE-20D151K | MDE Semiconductor | 150V; max peak current10000A; metal oxide varistor. Standard D series 20mm disc |
| MDE-20D471K | MDE Semiconductor | 470V; max peak current10000A; metal oxide varistor. Standard D series 20mm disc |
| SMBJ15 | MDE Semiconductor | 15.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMAJ75 | MDE Semiconductor | 75.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MAX20-14.0CA | MDE Semiconductor | 14.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| MAX40-45.0C | MDE Semiconductor | 45.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| SMBJ24A | MDE Semiconductor | 24.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMAJ48A | MDE Semiconductor | 48.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MAX40-36.0CA | MDE Semiconductor | 36.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| SA100A | MDE Semiconductor | 100.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
