BUZ907P similares

  • BUZ903P
    • N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V.
  • BUZ906D
    • P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V.
  • BUZ902D
    • N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
  • BUZ908
    • P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -250V.
  • BUZ902
    • N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
  • BUZ901X4S
    • N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V.
  • BUZ902
    • N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
  • BUZ900X4S
    • N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V.

BUZ907P Datasheet e Spec

Fabricante : Magnatec 

Embalagem : TO247 

Pins : 3 

Temperature : Min 0 °C | Max 150 °C

Tamanho : 26 KB

Aplicativo : P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -220V. 

BUZ907P PDF Download