Path:okDatasheet > Catalog Datasheet > NTE Electronic Datasheet > NTE Electronic-59
87 NTE5564 NTE6027 NTE914 NTE4992 NTE2593 NTE6046 NTE2572 NTE3088 NTE2640 NTE367 NTE7142 NTE6088 NTE6093 NTE2308 NTE6418 NTE5567 NTE5309 NTE16018-ECG NTE1476 NTE1764 NTE15008E NTE7119 NTE5458 NTE507 NTE6084 NTE2380 NTE5163A
Nome do ítem | Fabricante | Aplicativo |
---|---|---|
NTE2418 | NTE Electronic | Silicon complementary NPN transistor. Digital w/2 built-in bias 47k resistors (surface mount). |
NTE300 | NTE Electronic | Silicon complementary NPN transistor. Audio power amplifier. |
NTE5487 | NTE Electronic | Silicon controlled rectifier (SCR). Peak repetitive reverse and reverse blocking voltage Vrrm,Vdrm = 600V. Forward current RMS Itrms = 8A. |
NTE5564 | NTE Electronic | Silicon controlled rectifier (SCR). Repetitive peak off-state & reverse voltage Vdrm,Vrrm = 400V. RMS on-state current It(rms) = 35A. |
NTE6027 | NTE Electronic | Industrial silicon recfifier. Anode to case. Max peak repetitive reverse voltage 200V. Max average forward current 60A. |
NTE914 | NTE Electronic | Integrated circuit. Zero-voltage switch. 24V, 120V, 208/230V, 277V at 50Hz, 60Hz, or 400Hz operation. |
NTE4992 | NTE Electronic | Surge clamping, transient overvoltage suppressor, unidirectional. VR = 273.00V max reverse stand off voltage. |
NTE2593 | NTE Electronic | Silicon NPN transistor. High voltage amp/switch. |
NTE6046 | NTE Electronic | Silicon power recfifier diode . Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 85A. |
NTE2572 | NTE Electronic | Silicon NPN transistor. High current switch. |
NTE3088 | NTE Electronic | Optoisolator. Silicon NPN high voltage phototransistor output. |
NTE2640 | NTE Electronic | Silicon NPN transistor. Color TV horizontal deflection output. |
NTE367 | NTE Electronic | Silicon NPN transistor. RF power output, Po = 45W @ 512MHz. |
NTE7142 | NTE Electronic | Integrated circuit. +5W-powered, multichannel RS-232 driver/receiver. |
NTE6088 | NTE Electronic | Silicon dual schottky rectifier. Peak repetitive reverse voltage 100V. Average rectified forward current 10A. |
NTE6093 | NTE Electronic | Silicon dual schottky barrier rectifier. Max peak repetitive reverse voltage 60V. Average rectified forward current(per diode) 30A. |
NTE2308 | NTE Electronic | Silicon NPN transistor. High voltage, high current switch. |
NTE6418 | NTE Electronic | Bidirectional thyristor diode (SIDAC). Peak off voltage 90V. |
NTE5567 | NTE Electronic | Silicon controlled rectiifier (SCR) for phase control applications. Max repetitive peak forward and reverse voltage 200V. Max non - repetitive peak voltage 300V. Max peak reverse and off-state current 15mA. |
NTE5309 | NTE Electronic | Single phase bridge rectifier, 4A. Maximum recurrent peak reverse voltage Prv = 200V. |
NTE16018-ECG | NTE Electronic | Polymetric positive temperature coefficient (PTC) resettable fuse. |
NTE1476 | NTE Electronic | Integrated circuit. Audio power amplifier, 1.4W |
NTE1764 | NTE Electronic | Integrated circuit. Infrared preamplifier. |
NTE15008E | NTE Electronic | Integrated circuit protector. |
NTE7119 | NTE Electronic | Integrated circuit. 22W BTL (2 x 11W) stereo power amplifier. |
NTE5458 | NTE Electronic | Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 600V. RMS on-state current It = 4A. |
NTE507 | NTE Electronic | Silicon rectifier diode. |
NTE6084 | NTE Electronic | Silicon rectifier schottky barrier. Peak repetitive reverse voltage 45V. Average rectified forward current 30A. |
NTE2380 | NTE Electronic | N-Ch, complementary silicon gate MOSFETs enhancement mode, high speed switch. |
NTE5163A | NTE Electronic | Zener diode, 5 watt, +-5% tolerance. Nominal zener voltage Vz = 170V. Test current Izt = 8mA. |