| Nome do ítem | Fabricante | Aplicativo |
|---|
| 1SMB5929 | PanJit | Surface mount silicon zener diode. Power 1.5 Watts. Nominal zener voltage Vz = 15 V. Test current Izt = 25 mA |
| SD8100CS | PanJit | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current at Tc = 85degC 8.0 A. |
| 2EZ19 | PanJit | Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 19.0 V. Test current Izt = 26.3 mA. |
| P6KE180 | PanJit | Glass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 146.00V, Vbr(min/max) = 162.00/198.00V, It = 1 mA. |
| P4KE11A | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 9.40V, Vbr(min/max) = 10.50/11.60V, It = 1mA. |
| 3KP17 | PanJit | Glass passivated junction transient voltage suppressor. 3000 W peak pulse power. Vrwm = 17.00 V. Vbr = 18.90 V (min), 23.90 V (max). It = 1 mA. |
| MMBZ5257BW | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 33 V @ Izt. 200 mWatts zener diode. |
| P4KE43C | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 34.80V, Vbr(min/max) = 38.70/47.30V, It = 1 mA. |
| SD530T | PanJit | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 30 V. Max average forward rectified current at Tc = 75degC 5 A. |
| MMBZ5250BW | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 20 V @ Izt. 200 mWatts zener diode. |
| P6SMBJ12 | PanJit | Surfase mount transient voltage suppressor. 600W. Vrwm = 12 V. Vbr(min/max) = 13.3/16.9 V. It = 1.0 mA. Ir = 5 uA. Vc = 22.0 V. Ipp = 27.3 A. |
| 15KP110C | PanJit | Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/154.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 196 V @ Ipp = 77 A. |
| S1G | PanJit | Surfase mount rectifier. Max recurrent peak reverse voltage 400 V. Max average forward rectified current at Tl = 100degC 1.0 A. |
| 1SMB3EZ82 | PanJit | Surface mount silicon zener diode. Power 3.0 Watts. Nominal zener voltage Vz = 82 V. Test current Izt = 9.1 mA |
| P4SMAJ5.0CA | PanJit | Surfase mount transient voltage suppressor. Reverse stand-off voltage 5.0 V. Breakdown voltage(min/max) 6.40/7.55 V. Test current 10 mA. Reverse leakage 1600 uA. Max clamp voltage 9.2 V. Peak pulse current 43.5 A. |
| 3.0SMCJ64A | PanJit | Surface mount transient voltage suppressor. 3000 W peak power pulse. Vrwm = 64 V. Vbr(min/max) = 71.1/81.8 V @ It. Ir = 5 uA @ Vrwm. Vc = 103 V @ Ipp = 29.2 A. |
| 1F5G | PanJit | Glass passivated junction fast switching rectifier. Max recurrent peak reverse voltage 600 V. Max average forward rectified current 1.0 A. |
| GBPC35005W | PanJit | High current silicon bridge rectifier. Max recurrent peak reverse voltage 50 V. Max average forward current for resistive load at Tc=55degC 35 A. |
| P6KE12CA | PanJit | Glass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 10.20V, Vbr(min/max) = 11.40/12.60V, It = 1 mA. |
| 3KP120A | PanJit | Glass passivated junction transient voltage suppressor. 3000 W peak pulse power. Vrwm = 120.00 V. Vbr = 133.00 V (min), 153.00 V (max). It = 1 mA. |
| FR2J | PanJit | Surface mount ultrafast rectifier. Max recurrent peak reverse voltage 600V. Max average forward rectified current 2.0 A. |
| GL2508 | PanJit | In-line high current silicon bridge rectifier. Max recurrent peak reverse voltage 800 V. Max average forward current for resistive load at Tc=55degC 25 A. |
| SA70C | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 70.00V, Vbr(min/max) = 77.80/98.60V, It = 1 mA. |
| 15KP20 | PanJit | Glass passivated junction transient voltage suppressor. Vrwm = 20 V. Vbr(min/max) = 22.2/28.1 V @ It = 20 mA. Ir = 1500 uA. Vc = 35.8 V @ Ipp = 396 A. |
| P4KE120CA | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 102.00V, Vbr(min/max) = 114.00/126.00V, It = 1 mA. |
| 2EZ200 | PanJit | Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 200.0 V. Test current Izt = 2.5 mA. |
| P6SMBJ30CA | PanJit | Surfase mount transient voltage suppressor. 600W. Vrwm = 30 V. Vbr(min/max) = 33.3/38.3 V. It = 1.0 mA. Ir = 5 uA. Vc = 48.4 V. Ipp = 12.4 A. |
| GBP204 | PanJit | In-line glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 400V. Max average rectified output current 2.0A. |
| PG306R | PanJit | Glass passivated junction fast switching rectifier. Max recurrent peak reverse voltage 600 A. Max average forward rectified current 9.5mm lead lehgth at Ta = 55degC 3.0 A. |
| P4KE27A | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 23.10V, Vbr(min/max) = 25.70/28.40V, It = 1mA. |
