1N4006G spec: 800V; 1.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop

1N4006G similares

1N4001G
- 50V; 1.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop
1N4001GL
- 50V; 1.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop
1N4001L
- 50V; 1.0A rectifier; high current capability and low forward voltage drop
1N4002
- 100V; 1.0A rectifier; high current capability and low forward voltage drop
1N4002G
- 100V; 1.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop
1N4002L
- 100V; 1.0A rectifier; high current capability and low forward voltage drop
1N4003G
- 200V; 1.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop
1N4003GL
- 200V; 1.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop

1N4006G Datasheet e Spec

Fabricante : Diodes

Embalagem :

Pins : 2

Temperature : Min -65 °C | Max 150 °C

Tamanho : 65 KB

Aplicativo : 800V; 1.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop