EC-10N20 spec: N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range.

EC-10N20 similares

EC-10P16
- P-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.
EC-10N16
- N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.
EC-10N20
- N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range.
EC-10N20
- N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range.
EC-10P20
- P-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range.
EC-10N16
- N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.
EC-10N16
- N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.
EC-10P16
- P-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.

EC-10N20 Datasheet e Spec

Fabricante : EXICON

Embalagem : TO3P

Pins : 3

Temperature : Min -55 °C | Max 150 °C

Tamanho : 249 KB

Aplicativo : N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range.