HY57V641620HGLT-P spec: 4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 100 MHz

HY57V641620HGLT-P similares

HY57V641620HGLT-5I
- "4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 200 MHz"
HY57V658020BLTC-10P
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HY57V658020TC-12
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HY57V161610DTC-8
- 2 banks x 512K x 16 bit synchronous DRAM, LVTTL interface, 125 MHz
HY57V161610DTC-7I
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HY57V641620HGT-55
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HY57V658010TC-10
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HY57V641620HGT-7
- 4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, 143 MHz

HY57V641620HGLT-P Datasheet e Spec

Fabricante : HYNIX

Embalagem : TSOP II

Pins : 54

Temperature : Min 0 °C | Max 70 °C

Tamanho : 94 KB

Aplicativo : 4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 100 MHz