P6606-110 similares

  • P6606-110
    • Active area 1x1mm; 0.2mW; InSb photoconductive detector thermoelectrically cooled detector capable of long-term measurements
  • P6606-210
    • Active area 1x1mm; 0.2mW; InSb photoconductive detector thermoelectrically cooled detector capable of long-term measurements
  • P6606-310
    • Active area 1x1mm; 0.2mW; InSb photoconductive detector thermoelectrically cooled detector capable of long-term measurements
  • P6606-320
    • Active area 2x2mm; 0.2mW; InSb photoconductive detector thermoelectrically cooled detector capable of long-term measurements

P6606-110 Datasheet e Spec

Fabricante : Hamamatsu 

Embalagem : TO-8 

Pins : 6 

Temperature : Min -40 °C | Max 60 °C

Tamanho : 170 KB

Aplicativo : Active area 1x1mm; 0.2mW; InSb photoconductive detector thermoelectrically cooled detector capable of long-term measurements 

P6606-110 PDF Download