IRC530 spec: HEXFET power MOSFET. Continuous drain current 14A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 100V.

IRC530 similares

IRC530
- HEXFET power MOSFET. Continuous drain current 14A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 100V.
IRC540
- HEXFET power MOSFET. Continuous drain current 28A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 100V. Drain-to-source on-resistance 0.077Ohm

IRC530 Datasheet e Spec

Fabricante : IR

Embalagem : TO-220

Pins : 5

Temperature : Min -55 °C | Max 175 °C

Tamanho : 248 KB

Aplicativo : HEXFET power MOSFET. Continuous drain current 14A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 100V.