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IRF1104 spec: HEXFET power MOSFET. VDSS = 40V, RDS(on) = 0.009 Ohm, ID = 100A.
IRF1104 similares
- IRF1010E
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A.
- IRF1010EL
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- IRF1010N
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- IRF1010NL
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- IRF1010NS
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- IRF1104
- HEXFET power MOSFET. VDSS = 40V, RDS(on) = 0.009 Ohm, ID = 100A.
- IRF130
- Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =100V, RDS(on) = 0.18 Ohm, ID = 14A
IRF1104 Datasheet e Spec
Fabricante : IR
Embalagem :
Pins : 3
Temperature : Min -55 °C | Max 175 °C
Tamanho : 111 KB
Aplicativo : HEXFET power MOSFET. VDSS = 40V, RDS(on) = 0.009 Ohm, ID = 100A.
IRF1104 PDF Download