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IRF530N spec: HEXFET power MOSFET. VDSS = 100V, RDS(on) = 90 mOhm, ID = 17A
IRF530N similares
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- IRF520N
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IRF530N Datasheet e Spec
Fabricante : IR
Embalagem :
Pins : 3
Temperature : Min -55 °C | Max 175 °C
Tamanho : 233 KB
Aplicativo : HEXFET power MOSFET. VDSS = 100V, RDS(on) = 90 mOhm, ID = 17A
IRF530N PDF Download