IRF9Z14L similares

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    • HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
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IRF9Z14L Datasheet e Spec

Fabricante : IR 

Embalagem : TO-262 

Pins : 3 

Temperature : Min -55 °C | Max 175 °C

Tamanho : 397 KB

Aplicativo : HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.50 Ohm, ID = -6.7A 

IRF9Z14L PDF Download