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IRG4BC20W-S spec: Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.16V @ VGE = 15V, IC = 6.5A
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IRG4BC20W-S Datasheet e Spec
Fabricante : IR
Embalagem : DDPak
Pins : 3
Temperature : Min -55 °C | Max 150 °C
Tamanho : 167 KB
Aplicativo : Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.16V @ VGE = 15V, IC = 6.5A
IRG4BC20W-S PDF Download