IRG4BC30KD-S spec: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A

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IRG4BC30KD-S Datasheet e Spec

Fabricante : IR

Embalagem : DDPak

Pins : 3

Temperature : Min -55 °C | Max 150 °C

Tamanho : 247 KB

Aplicativo : Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A