IRG4BC40K spec: Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.1V @ VGE = 15V, IC = 25A

IRG4BC40K similares

IRG4BC10K
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IRG4BC10KD
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IRG4BC10S
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IRG4BC10SD
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IRG4BC10SD-L
- Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
IRG4BC10SD-L
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IRG4BC10SD-S
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IRG4BC10UD
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IRG4BC40K Datasheet e Spec

Fabricante : IR

Embalagem :

Pins : 3

Temperature : Min -55 °C | Max 150 °C

Tamanho : 171 KB

Aplicativo : Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.1V @ VGE = 15V, IC = 25A