IRG4PH40UD spec: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.43V @ VGE = 15V, IC = 21A

IRG4PH40UD similares

IRG4BC10K
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IRG4BC10KD
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IRG4BC10SD-L
- Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
IRG4BC10SD-L
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IRG4BC10UD
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IRG4PH40UD Datasheet e Spec

Fabricante : IR

Embalagem : TO-247AC

Pins : 3

Temperature : Min -55 °C | Max 150 °C

Tamanho : 241 KB

Aplicativo : Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.43V @ VGE = 15V, IC = 21A