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IRG4PH50S spec: Insulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 1.47V @ VGE = 15V, IC = 33A
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IRG4PH50S Datasheet e Spec
Fabricante : IR
Embalagem : TO-247AC
Pins : 3
Temperature : Min -55 °C | Max 150 °C
Tamanho : 142 KB
Aplicativo : Insulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 1.47V @ VGE = 15V, IC = 33A
IRG4PH50S PDF Download