IRG4PH50UD spec: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.78V @ VGE = 15V, IC = 24A

IRG4PH50UD similares

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IRG4PH50UD Datasheet e Spec

Fabricante : IR

Embalagem : TO-247AC

Pins : 3

Temperature : Min -55 °C | Max 150 °C

Tamanho : 251 KB

Aplicativo : Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.78V @ VGE = 15V, IC = 24A