Path:okDatasheet > Catalog Datasheet > JGD Datasheet > JGD-66
J5914B 1N4116D SMAJ75CA KBPC1001 1N5518C UF5406G SMAJ22A 1N5924D P4KE11C MSBL054 SMAJ5.0A 3EZ3.9D2 ES1D 3EZ170D2 FR151G 1N971D ZMM5234C P6KE160C SMBJ20A SMBJ5938D 1N4734A 1N5954B KBP208 1N963A ZMM5247A SFR306 1N971A SMBJ5935D
Nome do ítem | Fabricante | Aplicativo |
---|---|---|
P6KE300C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 300 V. Bidirectional. |
SMAJ20A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 20 V. |
SMBJ5914B | JGD | 1.5W silicon surface mount zener diode. Zener voltage 3.6 V. Test current 104.2 mA. +-5% tolerance. |
1N4116D | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 24V. 1% tolerance. |
SMAJ75CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 75 V. Bidirectional. |
KBPC1001 | JGD | Single phase 10 A silicon bridge rectifier. Max recurrent peak reverse voltage 100V. |
1N5518C | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-2% tolerance. |
UF5406G | JGD | Glass passivated ultra fast rectifier. Max recurrent peak reverse voltage 600 V. Max average forward rectified current 3.0 A. |
SMAJ22A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 22 V. |
1N5924D | JGD | 1.5 W, silicon zener diode. Zener voltage 9.1V. Test current 41.2 mA. +-1% tolerance. |
P4KE11C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 11 V. Bidirectional. |
MSBL054 | JGD | Single phase 0.5A glass passivated bridge rectifier. Repetitive peak reverse voltage 400V. |
SMAJ5.0A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 5.0 V. |
3EZ3.9D2 | JGD | 3 W, silicon zener diode. Nominal voltage 3.9V, current 192mA, +-2% tolerance. |
ES1D | JGD | 1.0 A super fast recovery silicon rectifier. Max recurrent peak reverse voltage 200 V. |
3EZ170D2 | JGD | 3 W, silicon zener diode. Nominal voltage 170 V, current 4.4 mA, +-2% tolerance. |
FR151G | JGD | 1.5A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 50V. |
1N971D | JGD | 0.5W, silicon zener diode. Zener voltage 27V. Test current 4.6mA. +-1% tolerance. |
ZMM5234C | JGD | Surface mount zener diode. Nominal zener voltage 6.2 V. Test current 20 mA. +-10% tolerance. |
P6KE160C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 160 V. Bidirectional. |
SMBJ20A | JGD | Surface mount transient voltage suppressor. Breakdown voltage 22.2 V (min), 24.5 V (max). Test current 1.0 mA. |
SMBJ5938D | JGD | 1.5W silicon surface mount zener diode. Zener voltage 36 V. Test current 10.4 mA. +-1% tolerance. |
1N4734A | JGD | 1W zener diode. Zener voltage 5.6V. |
1N5954B | JGD | 1.5 W, silicon zener diode. Zener voltage 160 V. Test current 2.3 mA. +-5% tolerance. |
KBP208 | JGD | Single-phase 2.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 800V. |
1N963A | JGD | 0.5W, silicon zener diode. Zener voltage 12V. Test current 10.5mA. +-10% tolerance. |
ZMM5247A | JGD | Surface mount zener diode. Nominal zener voltage 17 V. Test current 7.4 mA. +-3% tolerance. |
SFR306 | JGD | Soft fast recovery rectifier. Max recurrent peak reverse voltage 800 V. Max average forward current 3.0 A. |
1N971A | JGD | 0.5W, silicon zener diode. Zener voltage 27V. Test current 4.6mA. +-10% tolerance. |
SMBJ5935D | JGD | 1.5W silicon surface mount zener diode. Zener voltage 27 V. Test current 13.9 mA. +-1% tolerance. |