| Nome do ítem | Fabricante | Aplicativo |
|---|
| SMAJ10C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 10 V. Bidirectional. |
| 1N984C | JGD | 0.5W, silicon zener diode. Zener voltage 91V. Test current 1.4mA. +-2% tolerance. |
| 1N958A | JGD | 0.5W, silicon zener diode. Zener voltage 7.5V. Test current 16.5mA. +-10% tolerance. |
| 1N965C | JGD | 0.5W, silicon zener diode. Zener voltage 15V. Test current 8.5mA. +-2% tolerance. |
| 1N5945 | JGD | 1.5 W, silicon zener diode. Zener voltage 68 V. Test current 5.5 mA. +-20% tolerance. |
| FR607 | JGD | 6.0A, fast recovery rectifier. Max recurrent peak reverse voltage 1000V. |
| SMBJ5923 | JGD | 1.5W silicon surface mount zener diode. Zener voltage 8.2 V. Test current 45.7 mA. +-20% tolerance. |
| 1N5925 | JGD | 1.5 W, silicon zener diode. Zener voltage 10V. Test current 37.5 mA. +-20% tolerance. |
| 3EZ19D10 | JGD | 3 W, silicon zener diode. Nominal voltage 19 V, current 40 mA, +-10% tolerance. |
| ZMM5248A | JGD | Surface mount zener diode. Nominal zener voltage 18 V. Test current 7.0 mA. +-3% tolerance. |
| 1N4748 | JGD | 1W zener diode. Nominal zener voltage 22V. 10% tolerance. |
| 1N974 | JGD | 0.5W, silicon zener diode. Zener voltage 36V. Test current 3.4mA. +-20% tolerance. |
| SMAJ7.0CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 7.0 V. Bidirectional. |
| 1N4003L | JGD | 1.0A glass passivated rectifier. Max recurrent peak reverse voltage 200V. |
| ZMM5246A | JGD | Surface mount zener diode. Nominal zener voltage 16 V. Test current 7.8 mA. +-3% tolerance. |
| 1N5543A | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 25.0 V. Test current 1.0 mAdc. +-10% tolerance. |
| P4KE160CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 160 V. Bidirectional. |
| P4KE200A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 200 V. |
| ZMM55-C3V0 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 2.8-3.3 V. Test current 5 mA. +-5% tolerance. |
| SMAJ16 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 16 V. |
| P6KE8.2 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 8.2 V. |
| 1N975D | JGD | 0.5W, silicon zener diode. Zener voltage 39V. Test current 3.2mA. +-1% tolerance. |
| 3EZ200D5 | JGD | 3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-5% tolerance. |
| 3EZ39D | JGD | 3 W, silicon zener diode. Nominal voltage 39 V, current 19 mA, +-20% tolerance. |
| 1N4621D | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 3.6V. 1% tolerance. |
| SMBJ170A | JGD | Surface mount transient voltage suppressor. Breakdown voltage 189 V (min), 209 V (max). Test current 1.0 mA. |
| SMAJ40A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 40 V. |
| 6A8 | JGD | 6.0 A silicon rectifier. Max recurrent peak reverse voltage 800 V. |
| P4KE20C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 20 V. Bidirectional. |
| SK18 | JGD | Surface mount schottky barrier rectifier. Max recurrent peak reverse voltage 80 V. Max average forward current 1.0 A. |
