Path:okDatasheet > Catalog Datasheet > JGD Datasheet > JGD-81
5C SMAJ58A P6KE62CA P4KE56CA SMBJ58 FR104L 3EZ170D10 1N4749A 3EZ160D5 1N5519C 1N4746 SF22G 3EZ24D2 ZMM55-C15 SF31G SMBJ5931C MMBZ5253B 1N5934B 1N5523A SMBJ5953C 3EZ200D1 SMAJ15A 1N5927 1N747 1N5935D 1N5539C SMAJ78 SK13
| Nome do ítem | Fabricante | Aplicativo |
|---|---|---|
| 1N980A | JGD | 0.5W, silicon zener diode. Zener voltage 62V. Test current 2.0mA. +-10% tolerance. |
| SMAJ48C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 48 V. Bidirectional. |
| 1N4105C | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 11V. 2% tolerance. |
| SMAJ58A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 58 V. |
| P6KE62CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 62 V. Bidirectional. |
| P4KE56CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 56 V. Bidirectional. |
| SMBJ58 | JGD | Surface mount transient voltage suppressor. Breakdown voltage 64.4 V (min), 78.7 V (max). Test current 1.0 mA. Bidirectional. |
| FR104L | JGD | 1.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 400V. |
| 3EZ170D10 | JGD | 3 W, silicon zener diode. Nominal voltage 170 V, current 4.4 mA, +-10% tolerance. |
| 1N4749A | JGD | 1W zener diode. Zener voltage 24V. |
| 3EZ160D5 | JGD | 3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, +-5% tolerance. |
| 1N5519C | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 3.6 V. Test current 20 mAdc. +-2% tolenrance. |
| 1N4746 | JGD | 1W zener diode. Nominal zener voltage 18V. 10% tolerance. |
| SF22G | JGD | Glass passivated super fast rectifier. Max recurrent peak reverse voltage 100 V. Max average forward current 2.0 A. |
| 3EZ24D2 | JGD | 3 W, silicon zener diode. Nominal voltage 24 V, current 31 mA, +-2% tolerance. |
| ZMM55-C15 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 13.8-15.6 V. Test current 5 mA. +-5% tolerance. |
| SF31G | JGD | Glass passivated super fast rectifier. Max recurrent peak reverse voltage 50 V. Max average forward current 3.0 A. |
| SMBJ5931C | JGD | 1.5W silicon surface mount zener diode. Zener voltage 18 V. Test current 20.8 mA. +-2% tolerance. |
| MMBZ5253B | JGD | Surface mount zener diode. Nominal zener voltage 25.0V, test current 5.0mA. |
| 1N5934B | JGD | 1.5 W, silicon zener diode. Zener voltage 24V. Test current 15.6 mA. +-5% tolerance. |
| 1N5523A | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 5.1 V. Test current 5.0 mAdc. +-10% tolerance. |
| SMBJ5953C | JGD | 1.5W silicon surface mount zener diode. Zener voltage 150 V. Test current 2.5 mA. +-2% tolerance. |
| 3EZ200D1 | JGD | 3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-1% tolerance. |
| SMAJ15A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 15 V. |
| 1N5927 | JGD | 1.5 W, silicon zener diode. Zener voltage 12V. Test current 31.2 mA. +-20% tolerance. |
| 1N747 | JGD | 500mW, silicon zener diode. Zener voltage 3.6 V. Test current 20 mA. +-10% standard tolerance. |
| 1N5935D | JGD | 1.5 W, silicon zener diode. Zener voltage 27V. Test current 13.9 mA. +-1% tolerance. |
| 1N5539C | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 19.0 V. Test current 1.0 mAdc. +-2% tolerance. |
| SMAJ78 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 78 V. |
| SK13 | JGD | Surface mount schottky barrier rectifier. Max recurrent peak reverse voltage 30 V. Max average forward current 1.0 A. |