| Nome do ítem | Fabricante | Aplicativo |
|---|
| ZMM5223A | JGD | Surface mount zener diode. Nominal zener voltage 2.7 V. Test current 20 mA. +-3% tolerance. |
| P6KE160A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 160 V. |
| SMBJ60A | JGD | Surface mount transient voltage suppressor. Breakdown voltage 66.7 V (min), 73.7 V (max). Test current 1.0 mA. |
| GS1A | JGD | 1.0A, surface mount rectifier. Max recurrent peak reverse voltage 50V. |
| 1N753D | JGD | 500mW, silicon zener diode. Zener voltage 6.2 V. Test current 20 mA. +-1% tolerance. |
| SMBJ5921D | JGD | 1.5W silicon surface mount zener diode. Zener voltage 6.8 V. Test current 55.1 mA. +-1% tolerance. |
| SMBJ5952A | JGD | 1.5W silicon surface mount zener diode. Zener voltage 130 V. Test current 2.9 mA. +-10% tolerance. |
| SMAJ9.0 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 9.0 V. |
| P4KE110A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 110 V. |
| UF4002G | JGD | Glass passivated ultra fast rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current 1.0 A. |
| 6A05 | JGD | 6.0 A silicon rectifier. Max recurrent peak reverse voltage 50 V. |
| 1N979C | JGD | 0.5W, silicon zener diode. Zener voltage 56V. Test current 2.2mA. +-2% tolerance. |
| 1N4007G | JGD | 1.0A glass passivated rectifier. Max recurrent peak reverse voltage 1000V. |
| SMBJ100C | JGD | Surface mount transient voltage suppressor. Breakdown voltage 111 V (min), 136 V (max). Test current 1.0 mA. Bidirectional. |
| 3EZ120D2 | JGD | 3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, +-2% tolerance. |
| 1N4757D | JGD | 1W zener diode. Nominal zener voltage 51V. 1% tolerance. |
| KBP106G | JGD | Single-phase 1.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 600V. |
| 1N4005L | JGD | 1.0A glass passivated rectifier. Max recurrent peak reverse voltage 600V. |
| SMAJ7.0A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 7.0 V. |
| BAV70 | JGD | Surface mount switching diode. Max forward voltage 1.00V at 50mA. |
| ZMM55-A12 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 11.4-12.7 V. Test current 5 mA. +-1% tolerance. |
| 1N5818 | JGD | 1.0 A, schottky barrier rectifier. Max reccurent peak reverse voltage 30 V, max RMS voltage 21 V, max DC blocking voltage 30 V. |
| 1N5519D | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 3.6 V. Test current 20 mAdc. +-1% tolerance. |
| SMBJ110C | JGD | Surface mount transient voltage suppressor. Breakdown voltage 122 V (min), 149 V (max). Test current 1.0 mA. Bidirectional. |
| HER106L | JGD | 1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 600V. |
| SMAJ7.5C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 7.5 V. Bidirectional. |
| HA11G | JGD | 1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 50V. |
| P6KE24C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 24 V. Bidirectional. |
| SMBJ5939 | JGD | 1.5W silicon surface mount zener diode. Zener voltage 39 V. Test current 9.6 mA. +-20% tolerance. |
| SF15 | JGD | Super fast rectifier. Max recurrent peak reverse voltage 300 V. Max average forward current 1.0 A. |
