Path:OKDatasheet > Catalog Datasheet > Micro Electronics Datasheet > BC261
BC261 spec: 360mW PNP high gain low noise silicon planar epitaxial transistor
Path:OKDatasheet > Catalog Datasheet > Micro Electronics Datasheet > BC261
BC261 spec: 360mW PNP high gain low noise silicon planar epitaxial transistor
Fabricante : Micro Electronics
Embalagem : TO-18
Pins : 3
Temperature : Min -65 °C | Max 200 °C
Tamanho : 103 KB
Aplicativo : 360mW PNP high gain low noise silicon planar epitaxial transistor