BC261 similares

  • BC261
    • 360mW PNP high gain low noise silicon planar epitaxial transistor
  • BC262
    • 360mW PNP high gain low noise silicon planar epitaxial transistor
  • BC263
    • 360mW PNP high gain low noise silicon planar epitaxial transistor

BC261 Datasheet e Spec

Fabricante : Micro Electronics 

Embalagem : TO-18 

Pins : 3 

Temperature : Min -65 °C | Max 200 °C

Tamanho : 103 KB

Aplicativo : 360mW PNP high gain low noise silicon planar epitaxial transistor 

BC261 PDF Download