Path:OKDatasheet > Catalog Datasheet > Micro Electronics Datasheet > BD241B
BD241B spec: 4mW NPN silicon epitaxial base power transistor
BD241B similares
- BD241
- 4mW NPN silicon epitaxial base power transistor
- BD241A
- 4mW NPN silicon epitaxial base power transistor
- BD241B
- 4mW NPN silicon epitaxial base power transistor
- BD242
- 4mW NPN silicon epitaxial base power transistor
- BD242A
- 4mW NPN silicon epitaxial base power transistor
- BD242B
- 4mW NPN silicon epitaxial base power transistor
BD241B Datasheet e Spec
Fabricante : Micro Electronics
Embalagem : TO-220B
Pins : 3
Temperature : Min -55 °C | Max 150 °C
Tamanho : 106 KB
Aplicativo : 4mW NPN silicon epitaxial base power transistor
BD241B PDF Download