MTB33N10E similares

  • MTB30N06VL
    • TMOS V power field effect transistor
  • MTB30P06V
    • TMOS V power field effect transistor
  • MTB30P06V
    • TMOS V power field effect transistor
  • MTB33N10E
    • TMOS E-FET high energy power FET
  • MTB36N06V
    • TMOS V power field effect transistor
  • MTB3N120E
    • TMOS E-FET high energy power FET D2PAK for surface mount
  • MTB3N120E
    • TMOS E-FET high energy power FET D2PAK for surface mount
  • MTB3N60E
    • TMOS E-FET high energy power FET D2PAK for surface mount

MTB33N10E Datasheet e Spec

Fabricante : Motorola 

Embalagem : DPAK 

Pins : 4 

Temperature : Min -55 °C | Max 150 °C

Tamanho : 292 KB

Aplicativo : TMOS E-FET high energy power FET 

MTB33N10E PDF Download